(1) Pulse Test: Pulse width = 300 µs, Duty Cycle fT = |hfe|.ftest (TC = 25☌ Unless Otherwise Noted) Symbol Minimum Maximum UnitĬollector - emitter sustaining voltage (1) (IC = 200 mA, = 0) Collector - base sustaining voltage (1) (IC = 200 mA, RBE = 100 ohms) Collector cut off current (VCE 0 ) Collector cut off current (VCE 100 V, VBE (off) 1.5 V) (VCE 100 V, VBE (off) = 150☌) Emitter cut off current (VEB 0) ON Characteristics (1) DC current gain (IC 4 A, VCE 4 V) (IC 10 A, VCE 4 V) Collector - emitter saturation voltage (IC 0.4 A) (IC 3.3 A) Base - emitter on voltage (IC 4 A, VCE 4 V) Dynamic Characteristics Current gain - bandwidth product (2) (lc = 500 mA, VCE = 1 MHz) Small - signal current gain 1 A, VCE = 1 KHZ ) Power dissipation 25☌ DC current gain hFE 4 A VCE( Sat) 1.1 V (Maximum) 400 mA Designed for use general-purpose amplifier and low - frequency switching applicationsġ5 Amperes Complementary Silicon Power Transistors 60 Volts 115 WattsĬharacteristic Collector - emitter voltage Collector - emitter voltage Collector - base voltage Emitter - base voltage Collector current - continuous Base current Total power dissipation = 25☌ Derate above 25☌ Operating and storage junction temperature range Symbol VCEO VCBR VCBO VEBO IB PD TJ, TSTG Rating A W W/☌ ☌ V UnitĬharacteristic Thermal resistance junction to case Figure-1 Power Derating PD, Power Dissipation (Watts) Symbol Rjc Maximum 1.52 Unit ☌/W
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